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Ŀ¼ Ðò **ƪ ×Ô´« Ó×Äêʱ¹â 3 ²åÇú 7 ³õÈëСѧ 8 Ô¶×ãÓë½²ÑÝ 10 Ò¹¡°ÌÓ¡±ºì¾ü 11 ոеÄСѧÉú»î 12 ºî¼¯ÕòµÄ3 Äê³õÖÐÉú»î 14 Ò¹¾ª 15 Ñ©Ò¹ËÞ·¿Óª 16 Èë»ï 18 ½ôÕÅÓÐȤµÄ¿ÎÍâ»î¶¯ 19 ÄÏÑôµÚ¶þ¸ßÖÐ 20 Ö»Éí±±ÉÏÄÏ¿ªÇóѧ 23 µ¨Õ½ÐľªµÄ¸ßµÈÊýѧ¿Î 26 ¹²²úÖ÷ÒåÊî¼Ù 27 ëÖ÷ϯÊÓ²ìÄÏ¿ª´óѧ 28 3 ÄêÀ§ÄÑʱÆڵĴóѧÉú»î 29 ÔçÆÚ¿ÆÑй¤×÷¸ÅÊö 33 ʲɲº£ºÚÒ¹¾ÈͬÊ 37 Ìì½òСվÀͶ¯¶ÍÁ¶ 38 1978 ÄêÖйúÎïÀíѧ»áÄê»áȤÊ 40 ±äλô¶ûϵÊý²âÁ¿ÏµÍ³½¨Éè 41 ÁôѧÈðµä¡µÂ´óѧ¹ÌÌåÎïÀíϵ 42 1984 Äê»Ø¹úºóµÄÑо¿¹¤×÷ 45 µÚ¶þƪ ÂÛÖøÑ¡±à ¹èµÄµÍεçѧÐÔÖÊ 49 Evidence that the gold donor and acceptor in silicon are two levels of the same defect 57 Optical properties of iron doped AlxGa1-xAs alloys 62 Electronic properties of native deep-level defects in liquid-phase epitaxial GaAs 73 Direct evidence for random-alloy splitting of Cu levels in GaAs1-xPx 89 Acceptor associates and bound excitons in GaAs£ºCu 95 Localization of excitons to Cu-related defects in GaAs 116 Direct evidence for the acceptorlike character of the Cu-related C and F bound-exciton centers in GaAs 128 »ì¾§°ëµ¼ÌåÖÐÉîÄܼ¶µÄÕ¹¿í¼°ÆäÓйØЧӦ 140 Electronic properties of an electron-attractive complex neutral defect in GaAs 151 ¹èÖнðÊ©Ö÷ºÍÊÜÖ÷¹âµçÐÔÖʵÄϵͳÑо¿ 158 A novel model of ¡°new donors¡± in Czochralski-grown silicon 169 Electrical characteristics of GaAs grown from the melt in a reduced-gravity environment 177 SI-GaAs µ¥¾§ÈÈÎȶ¨ÐÔ¼°Æäµçѧ²¹³¥»úÀíÑо¿ 185 Interface roughness scattering in GaAs-AlGaAs modulation-doped heterostructures 195 Simulation of lateral confinement in very narrow channels 201 Theoretical investigation of the dynamic process of the illumination of GaAs 209 Effect of image forces on electrons confined in low-dimensional structures under a magnetic field 222 Photoluminescence studies of single submonolayer InAs structures grown on GaAs(001)matrix 234 Influence of DX centers in the Alx Ga1-x As barrier on the low-temperature density and mobility of the two-dimensional electron gas in GaAs / AlGaAs modulation-doped heterostructure 240 Photoluminescence studies on very high-density quasi-two-dimensional electron gases in pseudomorphic modulation-doped quantum wells 247 Ordering along £¿111£¿ and £¿100£¿ directions in GaInP demonstrated by photoluminescence under hydrostatic pressure 252 Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer 259 Electrical properties of semi-insulating GaAs grown from the melt under microgravity conditions 264 808nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice 269 Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs 275 °ëµ¼Ìå²ÄÁϵÄÏÖ×´ºÍ·¢Õ¹Ç÷ÊÆ 283 Effects of annealing on self-organized InAs quantum islands on GaAs(100) 285 Wurtzite GaN epitaxial growth on a Si(001)substrate using ¦Ã-Al2O3 as an intermediate layer 291 High-density InAs nanowires realized in situ on(100)InP 298 High power continuous-wave operation of self-organized In(Ga)As / GaAs quantum dot lasers 304 Quantum-dot superluminescent diode£º A proposal for an ultra-wide output spectrum 306 Optical properties of InAs self-organized quantum dots in n-i-p-i GaAs superlattices 317 High-performance strain-compensated InGaAs / InAlAs quantum cascade lasers 322 Research and development of electronic and optoelectronic materials in China 328 °ëµ¼ÌåÁ¿×ӵ㼤¹âÆ÷Ñо¿½øÕ¹ 339 High-power and long-lifetime InAs / GaAs quantum-dot laser at 1080nm 349 Self-assembled quantum dots£¬ wires and quantum-dot lasers 355 Controllable growth of semiconductor nanometer structures 365 Effect of In0. 2Ga0. 8As and In0. 2Al0. 8As combination layer on band offsets of InAs quantum dots 372 ÐÅÏ¢¹¦ÄܲÄÁϵÄÑо¿ÏÖ×´ºÍ·¢Õ¹Ç÷ÊÆ 380 High-performance quantum-dot superluminescent diodes 395 Time dependence of wet oxidized AlGaAs / GaAs distributed Bragg reflectors 400 Materials science in semiconductor processing 407 °ëµ¼ÌåÕÕÃ÷½«´¥·¢ÕÕÃ÷¹âÔ´µÄ¸ïÃü 409 Study of the wetting layer of InAs / GaAs nanorings grown by droplet epitaxy 415 Broadband external cavity tunable quantum dot lasers with low injection current density 422 Experimental investigation of wavelength-selective optical feedback for a high-power quantum dot superluminescent device with two-section structure 432 19¦Ìm quantum cascade infrared photodetectors 442 High-performance operation of distributed feedback terahertz quantum cascade lasers 450 Efficacious engineering on charge extraction for realizing highly efficient perovskite solar cells 456 Room temperature continuous wave quantum dot cascade laser emitting at 7.2¦Ìm 474 µÚÈýƪ ѧÊõ¹±Ï× ÈÌÊÜ·øÕÕÉËÍ´£¬»»À´ÎÒ¹ú¿Õ¼äÓùèÌ«Ñôµç³ØµÄ¶¨ÐÍͶ²ú 489 ÌôÕ½¹ú¼ÊȨÍþ£¬³ÎÇåGaAs ºÍ¹èÖÐÉîÄܼ¶ÎïÀí±¾ÖÊ 491 ¡°863¡±Ê®Ä꣬ÕƶæÎÒ¹úÐÂÐÍ°ëµ¼Ìå²ÄÁÏÓëÆ÷¼þ·¢Õ¹ 494 ÈΡ°S-863¡±×¨¼Ò×鳤£¬¿ªÕ¹Ð²ÄÁÏÁìÓòÕ½ÂÔÑо¿ 498 ÈÎ×Éѯ×é×鳤£¬Îª¡°973¡±²ÄÁÏÁìÓò·¢Õ¹×ö³öÖØÒª¹±Ï× 499 ¿ªÍØ´´Ð£¬½â¾ö¡°ÐÅÏ¢¹¦ÄܲÄÁÏÏà¹Ø»ù´¡ÎÊÌ⡱ 501 Íƶ¯²ÄÁÏ»ù´¡Ñо¿£¬ÊµÊ©¹âµçÐÅÏ¢¹¦ÄܲÄÁÏÖØ´óÑо¿¼Æ»® 503 µÚËÄƪ »ØÒä °ëµ¼Ìå²ÄÁÏ¿ÆѧʵÑéÊҵijｨÓë³õÆÚ·¢Õ¹Àú³Ì»Ø¹Ë 507 ÉîÇéºñÒ꣬Àú¾ÃÃÖ¼á 509 ÍõÕ¼¹úԺʿ¿ÆÑÐʼ£»Ø¹Ë 511 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