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Investigation of Heterostructure Defects for IPE Ga1¡ªxAlxAs£¯GaAs
Investigation of N¡ªdoped FZ Si Crystals
The Interaction Between Impurities and Defects in Semiconductors
Behaviors of Dislocations During Sl's Growth and Crystal Quality Assessment
Thermodynamic and Fluid Dynamic Analyses of GaAs Movpe Process
Photoluminescence Spectrum Study of the GaAs£¯Si Epilayer Grown by using a Thin Amorphous Si Film as Buffer Layer
Dissociated Screw Dislocation Which Can Relieve Strain Energy in the Epitaxial Layer of GeSi on Si£¨001£©
Hrtem Study of Dislocations in GeSi£¯Si Heterostructures Grown by VPE
Kinetics and Transport Model for the Chemical Vapor Epitaxy of GexSi1¡ªx
The Dependence of GexSi1¡ªx Epitaxial Growth on GeH4 Flow Using Chemical Vapour Deposition
Physical Properties and Growth of SiC
Study on Photoluminescence Spectra of SiC
Raman Study on Residual Strains in Thin 3C¡ªSiC Epitaxial Layers Grown on Si£¨001£©
Investigation of {111} A and {111} B Planes of c¡ªGaN Epilayers Grown on GaAs£¨001£©by MOCVD
Microtwins and Twin Inclusions in the 3C¡ªSiC Epilayers grown on Si£¨001£© by APCVD
Determination of Structure and Polarity of SiC Single Crystal by X¡ªRay Diffraction Technique
Is Thin¡ªFilm Solar Cell Technology Promising£¿
Optical and Electrical Properties of GaN£ºMg Grown by MOCVD
Defect Cluster¡ªInduced X¡ªRay Diffuse Scattering in GaN Films Grown by MOCVD
Growth of AlGaN Epitaxial Film with High Al Content by Metalorganic Chemical Vapour Deposition
Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics
Abatement of Waste Gases and Water During the Processes of Semiconductor Fabrication
Control of Arsenic Pollution from Waste Gases During Fabrication of Semiconductor
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