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微机电器件设计.制造及计算机辅助设计 版权信息
- ISBN:9787512421097
- 条形码:9787512421097 ; 978-7-5124-2109-7
- 装帧:暂无
- 册数:暂无
- 重量:暂无
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微机电器件设计.制造及计算机辅助设计 内容简介
Thisbookfirstlyintroducesthepertinentfundamentaltheory,importantmaterialandfabricationprocessofmicroGelectromechanicalsystems.Basedonthesetheories,thedesignruleandimportantengineeringexamplesaredescribedindetail.Then,manyengineeringapplicationsforMEMSincludingtheaccelerationmeasurement,theangularspeedmeasurementandthepressuremeasurementareintroduced.Finally,finiteelementmethodisintroducedinordertoprovethecorrectnessofthedesign.Thisengineeringapplicationofsimulationincludesthestaticandmodalanalysisofthebeam,capacitanceanalysis,thermalGstructureanalysisofthedeviceandfatigueanalysisetc.Itcanbeselectedasthereferencetothepostgraduates,undergraduatesandpertinentengineeringstaffwhoseresearch directionsareinstrumentationscienceandtechnology,controlscienceandengineering,mechanicalengineeringetc.
微机电器件设计.制造及计算机辅助设计 目录
1.1 ConceptofMEMS ……………………………………………………………………… 1
1.2 DevelopmentofMEMS ………………………………………………………………… 4
1.3 MEMSCAD …………………………………………………………………………… 9
Chapter2 BasictheoryofMEMS …………………………………………………………… 12
2.1 TheoryofelectrostaticMEMScombactuators …………………………………… 12
2.1.1 Introduction ……………………………………………………………………… 12
2.1.2 Operatingprinciples …………………………………………………………… 13
2.1.3 Platecapacitortheoryinidealcondition ……………………………………… 14
2.1.4 ThemodifiedmodelofMEMSplatecapaciator ……………………………… 17
2.1.5 Calculationofelectrostaticcombdrivingforceinidealsituation …………… 24
2.1.6 Weakcapacitancedetectionmethodofelectrostaticcombdrive …………… 26
2.2 RelevanttheoreticalcalculationsfortheMEMScantileverbeam ………………… 34
2.2.1 Introduction ……………………………………………………………………… 34
2.2.2 Theoreticalcalculationmethodforcantileverbeam ………………………… 35
2.2.3 RelevanttheoreticalcalculationofaxialtensileandcompressiveonsingleGend
clampedbeams ………………………………………………………………… 36
2.2.4 RelatedtheoreticalcalculationsofdoubleGendclampedbeamsaxialtension
andcompression ………………………………………………………………… 40
2.3 MembranetheoryofMEMS ………………………………………………………… 47
2.3.1 Theoryofclampedaroundcirculardiaphragm ………………………………… 48
2.3.2 Theoryofclampedaroundrectangularflatdiaphragm ……………………… 49
References …………………………………………………………………………………… 52
Chapter3 MEMSmaterials …………………………………………………………………… 53
3.1 Monocrystallinesilicon ……………………………………………………………… 53
3.1.1 Introduction ……………………………………………………………………… 53
3.1.2 Crystalorientationofmonocrystallinesilicon ………………………………… 55
3.2 Polycrystallinesilicon ………………………………………………………………… 64
3.3 Silica …………………………………………………………………………………… 66
3.4 Piezoelectricmaterials ………………………………………………………………… 67
3.4.1 Piezoelectriceffectandinversepiezoelectriceffectofmaterials …………… 67
3.4.2 Quartzcrystal …………………………………………………………………… 68
3.4.3 Piezoelectricceramics …………………………………………………………… 73
3.5 OtherMEMSmaterials ……………………………………………………………… 75
3.6 Summary ……………………………………………………………………………… 76
Chapter4 MEMStechnology ………………………………………………………………… 77
4.1 MEMSlithographyprocess ………………………………………………………… 78
4.2 KeytechnologyofMEMSlithographyprocess …………………………………… 80
4.2.1 Wafercleaning …………………………………………………………………… 80
4.2.2 Siliconoxidation ………………………………………………………………… 80
4.2.3 Spincoatingprocess …………………………………………………………… 87
4.2.4 Prebaking ………………………………………………………………………… 90
4.2.5 Exposure ………………………………………………………………………… 92
4.2.6 Development ……………………………………………………………………… 94
4.2.7 Hardening ………………………………………………………………………… 96
4.2.8 FabricationoftheSiO2 window ………………………………………………… 97
4.3 SubsequentprocessofMEMS ……………………………………………………… 98
4.3.1 Bulksilicontechnology ………………………………………………………… 98
4.3.2 Surfacesiliconprocess ………………………………………………………… 103
4.3.3 LIGAtechnology ……………………………………………………………… 104
4.3.4 Sputteringtechnology ………………………………………………………… 105
4.3.5 LiftGoffprocess ………………………………………………………………… 107
4.4 Filmpreparationtechnology………………………………………………………… 107
4.5 Bondingprocess ……………………………………………………………………… 108
4.5.1 Anodicbondingprocess………………………………………………………… 109
4.5.2 SiliconGsilicondirectbonding ………………………………………………… 110
4.5.3 Metaleutecticbonding ………………………………………………………… 113
4.5.4 Coldpressureweldingbonding ……………………………………………… 114
4.6 Engineeringexamplesofcombinationformultipleprocessestofabricatethe
MEMSdevice ………………………………………………………………………… 115
4.6.1 Introduction …………………………………………………………………… 115
4.6.2 EngineeringexampleoffabricationprocessforresonantMEMSgyroscope
…………………………………………………………………………………… 115
4.6.3 EngineeringexampleofelectromagneticmicroGmotorproductionprocess
…………………………………………………………………………………… 118
4.7 Summary ……………………………………………………………………………… 124
References…………………………………………………………………………………… 125
Chapter5 Frictionwearandtearundermicroscale ……………………………………… 126
5.1 OffGchiptestingmethodformicrofriction ………………………………………… 127
5.1.1 MicroGtribologytestwiththepinGonGdiscmeasuringmethod ……………… 127
5.1.2 MicroGtribologytestwithAFM ……………………………………………… 128
5.1.3 MicroGtribologytestwithspecialmeasuringdevice ………………………… 130
5.2 OnGchiptestingmethodformicrofriction ………………………………………… 132
5.2.1 OnGchiptestingmethodactuatedbyelectrostaticforce …………………… 132
5.2.2 OnGchipmicroGfrictiontestingmethodusingthemechanismcharactersof
thebimorphmaterial…………………………………………………………… 139
5.3 ExampleofthedesignforanonGchipmicroGfrictionstructure ………………… 141
5.3.1 Structureandworkingprinciple ……………………………………………… 141
5.3.2 Calculationofpertinenttheory ……………………………………………… 142
5.3.3 Technologicalanalysisofstructuraldesign ………………………………… 148
5.3.4 Testingresultsanddataanalysis……………………………………………… 152
5.3.5 ResearchandtestofwearproblemofMEMSdevices ……………………… 161
5.4 Summary ……………………………………………………………………………… 165
References…………………………………………………………………………………… 165
Chapter6 MEMStestingtechnologyandengineeringapplication ………………………… 169
6.1 Accelerationmeasurementandcorrespondingsensors …………………………… 169
6.1.1 Workingprincipleoftheaccelerationsensorandtheclassification ……… 170
6.1.2 Capacitivesiliconmicromechanicalaccelerometer …………………………… 172
6.1.3 Piezoresistivesiliconmicromechanicalaccelerometer ……………………… 173
6.1.4 Piezoelectricmicromechanicalaccelerometer ………………………………… 174
6.1.5 ResonantsiliconMEMSaccelerometer ……………………………………… 175
6.2 Angularspeedmeasurementandcorrespondingsensors ………………………… 177
6.2.1 Workingprinciple ……………………………………………………………… 177
6.2.2 DevelopmentofMEMSgyroscope …………………………………………… 178
6.2.3 Classificationofmicromechanicalgyroscope ………………………………… 188
6.3 Pressuremeasurementandcorrespondingsensors ……………………………… 190
6.3.1 Workingpincinple ……………………………………………………………… 190
6.3.2 Resonantsiliconmicromechanicalpressuresensoranditsdevelopment … 193
6.4 MeasurementofmicroGtorque ……………………………………………………… 198
6.4.1 Introduction …………………………………………………………………… 198
6.4.2 Workingprincipleofnoncontactmethod …………………………………… 199
6.4.3 Theoreticalcalculation ………………………………………………………… 200
6.4.4 Correspondingequipmenttorealizethenoncontactmethod ……………… 205
6.4.5 Experimentresultanddiscussion …………………………………………… 209
6.5 Microscopicmorphologytestingmethod ………………………………………… 211
6.6 Summary ……………………………………………………………………………… 212
References…………………………………………………………………………………… 212
Chapter7 Applicationexamplesofthefiniteelementmethodinthedesignof
MEMSdevices …………………………………………………………………… 218
7.1 Importantconceptsofthesoftware………………………………………………… 218
7.2 IntroductionoftheAnsyssoftwareinterface……………………………………… 220
7.3 ThecoordinatesysteminAnsys …………………………………………………… 221
7.4 Engineeringexamples ……………………………………………………………… 226
7.4.1 StaticanalysisofsingleGclampedbeam ……………………………………… 226
7.4.2 ModalanalysisofdoubleGclampedbeam ……………………………………… 245
7.4.3 CapacitanceanalysisofMEMSelectrostaticcombfingersdrive …………… 257
7.4.4 Fatiguestrengthcalculationexample ………………………………………… 264
7.5 Summary ……………………………………………………………………………… 272
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